This resulted in a reduced get the job done purpose and the development of the Schottky Speak to between the BrGO and n-variety Si substrate. As a consequence of the upper proportion of B-C and B-C3 bonding inside the BrGO/Si device than that within the rGO/Si, the lowered Schottky barrier https://www.directivepublications.org/journal-of-applied-nanoscience/