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Gan on silicon carbide - An Overview

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SiC attributes 10x the breakdown electric industry energy of silicon, making it feasible to configure higher voltage (600V to thousands of V) power devices via a thinner drift layer and better impurity concentration. Due to the fact the majority of the resistance component of superior-voltage devices is situated from the https://x.com/hongyuxin20/status/1818539592024261065

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